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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA2169-E

2SA2169-E

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Part Number	2SA2169-E
Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 50V 10A TP
Lead Free Status / RoHS Status	Lead free / RoHS Compliant

~~In Stock~~ 129725 pcs
Reference Price (In US Dollars)	1 pcs	10 pcs	100 pcs	500 pcs	1000 pcs
Reference Price (In US Dollars)	$0.346	$0.306	$0.234	$0.185	$0.148

Product parameter
Data sheet

Product parameter

Part Number	2SA2169-E	Manufacturer	AMI Semiconductor / ON Semiconductor
Description	TRANS PNP 50V 10A TP	Lead Free Status / RoHS Status	Lead free / RoHS Compliant
Quantity Available	129725 pcs	Data sheet	2SA2169/2SC6017
Category	Discrete Semiconductor Products	Voltage - Collector Emitter Breakdown (Max)	50V
Vce Saturation (Max) @ Ib, Ic	580mV @ 250mA, 5A	Transistor Type	PNP
Supplier Device Package	TP	Series	-
Power - Max	950mW	Packaging	Bulk
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA	Other Names	2SA2169-E-ND 2SA2169-EOS
Operating Temperature	150°C (TJ)	Mounting Type	Through Hole
Moisture Sensitivity Level (MSL)	1 (Unlimited)	Manufacturer Standard Lead Time	2 Weeks
Lead Free Status / RoHS Status	Lead free / RoHS Compliant	Frequency - Transition	130MHz
Detailed Description	Bipolar (BJT) Transistor PNP 50V 10A 130MHz 950mW Through Hole TP	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1A, 2V
Current - Collector Cutoff (Max)	10µA (ICBO)	Current - Collector (Ic) (Max)	10A

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