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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2SA1179N6-CPA-TB-E

2SA1179N6-CPA-TB-E

2SA1179N6-CPA-TB-E
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Part Number 2SA1179N6-CPA-TB-E
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 50V 0.15A CP
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5321 pcs
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Product parameter

Part Number 2SA1179N6-CPA-TB-E Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS PNP 50V 0.15A CP Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5321 pcs Data sheet 2SA1179N/2SC2812N
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA Transistor Type PNP
Series - Power - Max 200mW
Packaging Tape & Reel (TR) Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Lead free / RoHS Compliant
Frequency - Transition 180MHz Detailed Description Bipolar (BJT) Transistor PNP 50V 150mA 180MHz 200mW Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1mA, 6V Current - Collector Cutoff (Max) 100nA (ICBO)
Current - Collector (Ic) (Max) 150mA

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