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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N6387G

2N6387G

2N6387G
OMRON AUTOMATION & SAFETYImages are for reference only.
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Part Number 2N6387G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 60V 10A TO220AB
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 150147 pcs
Reference Price
(In US Dollars)
1 pcs50 pcs100 pcs500 pcs1000 pcs
$0.337$0.277$0.226$0.179$0.143

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Target Price:(USD)
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$0.337

Product parameter

Part Number 2N6387G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN DARL 60V 10A TO220AB Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 150147 pcs Data sheet 2N6387, 88
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A Transistor Type NPN - Darlington
Supplier Device Package TO-220AB Series -
Power - Max 2W Packaging Tube
Package / Case TO-220-3 Other Names 2N6387G-ND
2N6387GOS
Operating Temperature -65°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Manufacturer Standard Lead Time 2 Weeks
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition -
Detailed Description Bipolar (BJT) Transistor NPN - Darlington 60V 10A 2W Through Hole TO-220AB DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 3V
Current - Collector Cutoff (Max) 1mA Current - Collector (Ic) (Max) 10A
Base Part Number 2N6387

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