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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N5551ZL1G

2N5551ZL1G

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Part Number 2N5551ZL1G
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 160V 0.6A TO-92
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 5228 pcs
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Part Number 2N5551ZL1G Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 160V 0.6A TO-92 Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 5228 pcs Data sheet 2N5550, 5551
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Transistor Type NPN
Supplier Device Package TO-92-3 Series -
Power - Max 625mW Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant Frequency - Transition 300MHz
Detailed Description Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 50nA (ICBO) Current - Collector (Ic) (Max) 600mA
Base Part Number 2N5551

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