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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N5551RLRA

2N5551RLRA

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Part Number 2N5551RLRA
Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 160V 0.6A TO92
Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
In Stock 4454 pcs
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Part Number 2N5551RLRA Manufacturer AMI Semiconductor / ON Semiconductor
Description TRANS NPN 160V 0.6A TO92 Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Quantity Available 4454 pcs Data sheet 2N5550, 5551
Category Discrete Semiconductor Products Voltage - Collector Emitter Breakdown (Max) 160V
Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA Transistor Type NPN
Supplier Device Package TO-92-3 Series -
Power - Max 625mW Packaging Cut Tape (CT)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Other Names 2N5551RLRAOSCT
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) Lead Free Status / RoHS Status Contains lead / RoHS non-compliant
Frequency - Transition 300MHz Detailed Description Bipolar (BJT) Transistor NPN 160V 600mA 300MHz 625mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V Current - Collector Cutoff (Max) 50nA (ICBO)
Current - Collector (Ic) (Max) 600mA Base Part Number 2N5551

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