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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > TP65H050WS

TP65H050WS

TP65H050WS
OMRON AUTOMATION & SAFETYImages are for reference only.
See Product Specifications for product details.
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Part Number TP65H050WS
Manufacturer Transphorm
Description 650 V 34 A CASCODE GAN FET
Lead Free Status / RoHS Status Lead free / RoHS Compliant
In Stock 6467 pcs
Reference Price
(In US Dollars)
1 pcs10 pcs30 pcs120 pcs270 pcs
$6.632$6.029$5.577$5.125$4.673

Submit a Request For Quotation on quantities greater than those displayed.

Target Price:(USD)
Quantity:
Total:
$6.632

Product parameter

Part Number TP65H050WS Manufacturer Transphorm
Description 650 V 34 A CASCODE GAN FET Lead Free Status / RoHS Status Lead free / RoHS Compliant
Quantity Available 6467 pcs Data sheet TP65H050WS
Category Discrete Semiconductor Products Vgs(th) (Max) @ Id 4.8V @ 700µA
Vgs (Max) ±20V Technology GaNFET (Gallium Nitride)
Supplier Device Package TO-247-3 Series -
Rds On (Max) @ Id, Vgs 60 mOhm @ 22A, 10V Power Dissipation (Max) 119W (Tc)
Package / Case TO-247-3 Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Moisture Sensitivity Level (MSL) 3 (168 Hours)
Manufacturer Standard Lead Time 15 Weeks Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds 1000pF @ 400V Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
FET Type N-Channel FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V Drain to Source Voltage (Vdss) 650V
Detailed Description N-Channel 650V 34A (Tc) 119W (Tc) Through Hole TO-247-3 Current - Continuous Drain (Id) @ 25°C 34A (Tc)

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